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| SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. APPLICATIONS Battery Powered System DC/DC Converter Load Switch Cell Phone FEATURES P-Channel -30V/-2.8A,RDS(ON)=105m@VGS=- 10V -30V/-2.5A,RDS(ON)=115m@VGS=-4.5V -30V/-1.5A,RDS(ON)=150m@VGS=-2.5V Schottky VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP- 6P package design PIN CONFIGURATION( TSOP- 6P ) PART MARKING 2006/11/25 Ver.1 Page 1 SPC6801 P-Channel Trench MOSFET with Schottky Diode PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol A S G D NC K Description Schottky Anode MOSFET Source MOSFET Gate MOSFET Drain No Connect Schottky Cathode ORDERING INFORMATION Part Number SPC6801ST6RG Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6801ST6RG : Tape Reel ; Pb - Free Package TSOP- 6P Part Marking 81YW ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Schottky Reverse Voltage Continuous Forward Current Pulsed Forward Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T 10sec Steady State TA=25 TA=70 TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM VKA IF IFM IS PD TJ TSTG RJA -1.4 -30 12 -2.8 -2.1 -10 20 1 0.7 10 Typical P-Channel Schottky Unit V V A A V A A A W /W 1.15 0.75 -55/150 -55/150 52 90 0.9 0.6 2006/11/25 Ver.1 Page 2 SPC6801 P-Channel Trench MOSFET with Schottky Diode ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter MOSFET Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage MOSFET Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Schottky Parameters Forward Voltage Drop Reverse Breakdown Voltage Maximum reverse leakage current Junction Capacitance SchottkyReverse Recovery Time Schottky Reverse Recovery Charge VF VBR Irm CT Trr Qrr IF = 500mA IR = 500uA VR = 20V VR = 20V , TJ=70 VR = 10V VR = 0V , f=1MHz IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s 20 0.1 1 31 120 5.4 0.8 0.41 0.47 V V mA pF 10 ns nC Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=-15V ,RL=15 ID-1.0A ,VGEN=-10V RG=3 VDS=-15V ,VGS=0V f=1MHz VDS=-15V ,VGS=-4.5V ID-2.0A 5.8 0.8 1.5 380 55 40 6 3.9 40 15 ns pF nC V(BR)DSS VGS=0V,ID=-10uA VGS(th) VDS=VGS,ID=-250uA VDS=0V,VGS=20V VDS=-24V,VGS=0V IDSS VDS=-24V,VGS=0V TJ=55 ID(on) VDS= -5V,VGS =-4.5V VGS=-10V,ID=-2.8A RDS(on) VGS=-4.5V,ID=-2.5A VGS=-2.5V,ID=-1.5A gfs VDS=-10V,ID=-2.8A VSD IS=-1.2A,VGS=0V IGSS -30 -0.4 -1.0 100 -1 -10 -4 0.085 0.100 0.135 4.0 -0.8 0.105 0.115 0.150 -1.2 V nA uA A S V Symbol Conditions Min. Typ Max. Unit 2006/11/25 Ver.1 Page 3 SPC6801 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2006/11/25 Ver.1 Page 4 SPC6801 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2006/11/25 Ver.1 Page 5 SPC6801 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2006/11/25 Ver.1 Page 6 SPC6801 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( Schottky ) 2006/11/25 Ver.1 Page 7 SPC6801 P-Channel Trench MOSFET with Schottky Diode TSOP- 6P PACKAGE OUTLINE 2006/11/25 Ver.1 Page 8 SPC6801 P-Channel Trench MOSFET with Schottky Diode Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. (c)The SYNC Power logo is a registered trademark of SYNC Power Corporation (c)2004 SYNC Power Corporation - Printed in Taiwan - All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 (c)http://www.syncpower.com 2006/11/25 Ver.1 Page 9 |
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